A 150 GHz Amplifier With 8 dB Gain and 6 dBm in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines
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چکیده
A 150 GHz amplifier in digital 65 nm CMOS process is presented. Matching loss is reduced and bandwidth extended by simplistic topology: no dc-block capacitor, shunt-only tuning and radial stubs for ac ground. Dummy-prefilled microstrip lines, with explicit yet efficient dummy modeling, are used as a compact, density-rule compliant matching element. Transistor layout with parallel gate feed yields 5.7 dB of MSG at 150 GHz. Measurement shows the amplifier exhibits 8.2 dB of gain, 6.3 dBm of , 1.5 dBm of and 27 GHz of 3 dB bandwidth, while consuming 25.5 mW at 1.1 V. The dummy-prefilled microstrip line exhibits up to 200 GHz.
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تاریخ انتشار 2009